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JANTX2N3421S

数据手册.pdf

Trans GP BJT NPN 80V 3A 3Pin TO-39

This family of high-frequency, epitaxial planar transistors feature low saturation voltage.    These devices are also available in TO-5 and low profile U4 packages.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.


艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN JANTX2N3421S BJT, developed by Microsemi, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 8 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.


Verical:
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-39 Bag


JANTX2N3421S中文资料参数规格
技术参数

耗散功率 1 W

击穿电压集电极-发射极 80 V

最小电流放大倍数hFE 40 @1A, 2V

额定功率Max 1 W

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 1000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-39

外形尺寸

封装 TO-39

物理参数

材质 Silicon

工作温度 -65℃ ~ 200℃ TJ

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

含铅标准

JANTX2N3421S引脚图与封装图
暂无图片
在线购买JANTX2N3421S
型号 制造商 描述 购买
JANTX2N3421S Microsemi 美高森美 Trans GP BJT NPN 80V 3A 3Pin TO-39 搜索库存
替代型号JANTX2N3421S
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: JANTX2N3421S

品牌: Microsemi 美高森美

封装: TO-39 1000mW

当前型号

Trans GP BJT NPN 80V 3A 3Pin TO-39

当前型号

型号: JANS2N5154L

品牌: 美高森美

封装: TO-5

完全替代

Trans GP BJT NPN 80V 2A 3Pin TO-5

JANTX2N3421S和JANS2N5154L的区别

型号: JANS2N5154

品牌: 美高森美

封装: TO-39

完全替代

Trans GP BJT NPN 80V 2A 3Pin TO-39

JANTX2N3421S和JANS2N5154的区别

型号: JANTXV2N5154

品牌: 美高森美

封装: TO-39 1000mW

类似代替

NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR

JANTX2N3421S和JANTXV2N5154的区别