JAN2N1893
数据手册.pdfMicrosemi(美高森美)
分立器件
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
Implement this NPN GP BJT from to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.