锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

JANTX1N756AUR-1

JANTX1N756AUR-1

数据手册.pdf
Microsemi 美高森美 分立器件

SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES

• 1N746AUR-1 THRU 1N759AUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127

• 1N4370AUR-1 THRU 1N4372AUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/127

• LEADLESS PACKAGE FOR SURFACE MOUNT

• METALLURGICALLY BONDED


艾睿:
The best way to operate a diode in the reverse-breakdown region in your circuit is by using a voltage regulator JANTX1N756AUR-1 zener diode from Microsemi. Its test current is 20 mA. This device has a maximum regulator current of 50 mA. Its maximum leakage current is 1 μA. Its maximum power dissipation is 500 mW. This zener diode has an operating temperature range of -65 °C to 175 °C. This zener device has a nominal voltage of 8.2 V and a voltage tolerance of 5%. It is made in a single configuration.


Chip1Stop:
Diode Zener Single 8.2V 5% 500mW 2-Pin DO-213AA


Verical:
Diode Zener Single 8.2V 5% 500mW 2-Pin DO-213AA


JANTX1N756AUR-1中文资料参数规格
技术参数

耗散功率 500 mW

测试电流 20 mA

稳压值 8.2 V

工作温度Max 175 ℃

工作温度Min -65 ℃

封装参数

安装方式 Surface Mount

引脚数 2

封装 DO-213AA

外形尺寸

封装 DO-213AA

其他

产品生命周期 Active

包装方式 Bag

符合标准

RoHS标准 Non-Compliant

JANTX1N756AUR-1引脚图与封装图
暂无图片
在线购买JANTX1N756AUR-1
型号 制造商 描述 购买
JANTX1N756AUR-1 Microsemi 美高森美 SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES 搜索库存