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IPZA60R180P7XKSA1

IPZA60R180P7XKSA1

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

晶体管, MOSFET, N沟道, 18 A, 600 V, 0.145 ohm, 10 V, 3.5 V

extends the large portfolio of the 600 V CoolMOS P7 SJ MOSFET introducing an improved version of the standard TO-247 4 pin package. The TO-247 4 pin with asymmetric leads comes along with 0.54 mm increased creepage distance between the critical leads and enables smoother wave soldering and reduced board yield loss. The additional connection to the source Kelvin connection, that is used as a reference potential for the gate driving voltage, eliminates the effect of voltage drops over the source inductance enabling faster switching transients which results in significant efficiency improvement. This allows for higher MOSFET RDSon usage and BOM cost savings. CoolMOS P7 is Infineon"s best balanced technology, with optimized balance of ease-of-use and highest energy efficiency

IPZA60R180P7, SP001707746

IPZA60R180P7XKSA1中文资料参数规格
技术参数

针脚数 4

漏源极电阻 0.145 Ω

耗散功率 72 W

阈值电压 3.5 V

漏源极电压Vds 600 V

上升时间 8 ns

输入电容Ciss 1081pF @400VVds

下降时间 8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 72000 mW

封装参数

安装方式 Through Hole

引脚数 4

封装 TO-247-4

外形尺寸

封装 TO-247-4

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

IPZA60R180P7XKSA1引脚图与封装图
暂无图片
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