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IPA60R180P7

IPA60R180P7

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

N沟道 600V 18A

Description:

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge Q G of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features:

**Efficiency**

.
600V P7 enables excellent FOM R DSonxE oss andR DSonxQ G

**Ease-of-use**

.
Integrated ESD diode from 180mN and above R DSons
.
Integrated gate resistor R G
.
Rugged body diode
.
Wide portfolio in through hole and surface mount packages
.
Both standard grade and industrial grade parts are available

Benefits:

**Efficiency**

.
Excellent FOMs R DSonxQ G/R DSonxE oss enable higher efficiency

**Ease-of-use**

.
Ease-of-use in manufacturing environments by stopping ESD failures occurring
.
Integrated R G reduces MOSFET oscillation sensitivity
.
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
.
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
.
Suitable for a wide variety of end applications and output powers
.
Parts available suitable for consumer and industrial applications
IPA60R180P7中文资料参数规格
技术参数

耗散功率 26 W

上升时间 12 ns

输入电容Ciss 1081pF @400VVds

下降时间 8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 26000 mW

封装参数

引脚数 3

封装 TO-220

外形尺寸

封装 TO-220

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Rail, Tube

制造应用 Industrial SMPS, TV power supply, Telecom, Lighting, Server

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IPA60R180P7引脚图与封装图
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