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IPSA70R1K4CEAKMA1

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

晶体管, MOSFET, N沟道, 5.4 A, 700 V, 1.26 ohm, 10 V, 3 V

Description:

CoolMOS™ CE is a technology platform of ´s market leading high voltage power MOSFET designed according to the superjunction principle SJ and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools,  LCD,  LED TV and  LED lighting applications.

 

Summary of Features:

.
Thermal behavior
.
≤ 90°C on device, open case
.
≤ 50°C/70°C close case temperature
.
„EMI within EN55022B standard
.
Ease of use and fast design-in

Benefits:

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Low conduction losses from large margin between R DSon typical to nominal
.
„Low switching losses from optimized output capacitance E oss
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„Optimized EMI to balance switching speed and EMI behavior
.
„Good controllability given the integrated R g

Target Applications:

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Low power chargers
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Adapters
.
PC silverbox
.
LCD TV
.
LED retrofit
.
LED drivers
IPSA70R1K4CEAKMA1中文资料参数规格
技术参数

针脚数 3

漏源极电阻 1.26 Ω

耗散功率 53 W

阈值电压 3 V

漏源极电压Vds 700 V

上升时间 5.9 ns

输入电容Ciss 225pF @100VVds

下降时间 18.2 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 53000 mW

封装参数

引脚数 3

封装 TO-251-3

外形尺寸

封装 TO-251-3

其他

产品生命周期 Active

符合标准

RoHS标准

含铅标准 Lead Free

IPSA70R1K4CEAKMA1引脚图与封装图
暂无图片
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