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IPD70R1K4P7S

IPD70R1K4P7S

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

Power MOSFET, TH, 3Pin+tab DPAK, 700V, 1.4Ω

Description:

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

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Efficiency and thermals
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Ease-of-use
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EMI behavior

Summary of Features:

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Extremely low FOM R DSon x E oss; lower Q g, E on and E off
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Highly performant technology
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Low switching losses E oss
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Highly efficient
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Excellent thermal behavior
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Allowing high speed switching
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Integrated protection Zener diode
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Optimized V GSth of 3V with very narrow tolerance of ±0.5V
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Finely graduated portfolio

Benefits:

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Cost competitive technology
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Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
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Further efficiency gain at higher switching speed
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Supporting less magnetic size with lower BOM costs
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High ESD ruggedness up to HBM Class 2 level
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Easy to drive and design-in
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Enabler for smaller form factors and high power density designs
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Excellent choice in selecting the best fitting product
IPD70R1K4P7S中文资料参数规格
技术参数

上升时间 4.9 ns

输入电容Ciss 158pF @400VVds

下降时间 61 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 22700 mW

封装参数

引脚数 3

封装 TO-252

外形尺寸

封装 TO-252

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

制造应用 Aux power

符合标准

RoHS标准

含铅标准 Lead Free

IPD70R1K4P7S引脚图与封装图
暂无图片
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IPD70R1K4P7S Infineon 英飞凌 Power MOSFET, TH, 3Pin+tab DPAK, 700V, 1.4Ω 搜索库存