IPD60R180P7ATMA1

晶体管, MOSFET, N沟道, 18 A, 600 V, 0.145 ohm, 10 V, 3.5 V

Description:

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge Q G of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features:

**Efficiency**

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600V P7 enables excellent FOM R DSonxE oss andR DSonxQ G

**Ease-of-use**

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Integrated ESD diode from 180mN and above R DSons

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Integrated gate resistor R G

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Rugged body diode

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Wide portfolio in through hole and surface mount packages

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Both standard grade and industrial grade parts are available

Benefits:

**Efficiency**

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Excellent FOMs R DSonxQ G/R DSonxE oss enable higher efficiency

**Ease-of-use**

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Ease-of-use in manufacturing environments by stopping ESD failures occurring

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Integrated R G reduces MOSFET oscillation sensitivity

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MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

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Excellent ruggedness during hard commutation of the body diode seen in LLC topology

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Suitable for a wide variety of end applications and output powers

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Parts available suitable for consumer and industrial applications