IRS2890DSTRPBF

半桥 IGBT MOSFET 灌:220mA 拉:480mA

Summary of Features:

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Floating channel designed for bootstrap operation

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Fully operational to +600 V

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Tolerant to negative transient voltage, dV/dt immune

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Gate drive supply range from 10 V to 20 V

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Undervoltage lockout for both channels

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3.3 V, 5 V, and 15 V input logic compatible

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Matched propagation delay for both channels

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Lower di/dt gate driver for better noise immunity

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Outputs in phase with inputs

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Integrated bootstrap functionality

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Suitable for both trapezoidal and sinusoidal motor control

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Overcurrent protection and fault reporting

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Advanced input filter

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Integrated deadtime protection

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Shoot-through cross-conduction protection

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Adjustable fault clear timing

Benefits:

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High power density is achieved by integrating overcurrent protection, fault reporting, fault clear function, bootstrap FET, undervoltage lockout protection, and shoot-through protection

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Increased device reliability due to rugged hard switching performance and high power capability