IPB048N15N5ATMA1

晶体管, MOSFET, N沟道, 120 A, 150 V, 0.0037 ohm, 10 V, 3.8 V

Description:

The new OptiMOS™ 5 150 V power MOSFETs from are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DSon up to 25 percent compared to the next best alternative in SuperSO8 and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge Q rr = 26 nC in SuperSO8 increases commutation ruggedness.

Summary of Features:

.

Lower R DSon without compromising FOM gd and FOM oss

.

Lower output charge

.

Ultra-low reverse recovery charge

.

Increased commutation ruggedness

.

Higher switching frequency possible

Benefits:

.

Reduced paralleling

.

Size reduction enabled with SuperSO8 best-in-class

.

Higher power density designs

.

More rugged products

.

System cost reduction

.

Improved EMI behavior