IPD60R3K4CEAUMA1
数据手册.pdfInfineon(英飞凌)
电子元器件分类
晶体管, MOSFET, N沟道, 2.6 A, 600 V, 3.17 ohm, 10 V, 3 V
Summary of Features:
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- Narrow margins between typical and max R DSon
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- Reduced energy stored in output capacitance E oss
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- Good body diode ruggedness and reduced reverse recovery charge Q rr
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- Optimized integrated R g
Benefits:
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- Low conduction losses
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- Low switching losses
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- Suitable for hard and soft switching
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- Easy controllable switching behavior
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- Improved efficiencyand consequent reduction of power consumption
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- Less design in effort
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- Easy to use
Target Applications:
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- Laptop and notebook adapter
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- Low power charger
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- Lighting
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- LCD and LED TV