IPB073N15N5ATMA1

晶体管, MOSFET, N沟道, 114 A, 150 V, 0.0056 ohm, 10 V, 3.8 V

Description:

The new OptiMOS™ 5 150 V power MOSFETs from are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DSon up to 25 percent compared to the next best alternative in SuperSO8 and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge Q rr = 26 nC in SuperSO8 increases commutation ruggedness.

Summary of Features:

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Lower R DSon without compromising FOM gd and FOM oss

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Lower output charge

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Ultra-low reverse recovery charge

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Increased commutation ruggedness

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Higher switching frequency possible

Benefits:

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Reduced paralleling

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Size reduction enabled with SuperSO8 best-in-class

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Higher power density designs

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More rugged products

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System cost reduction

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Improved EMI behavior