IPD60R650CEAUMA1

晶体管, MOSFET, N沟道, 9.9 A, 600 V, 0.54 ohm, 10 V, 3 V

Summary of Features:

.

Narrow margins between typical and max R DSon

.

Reduced energy stored in output capacitance E oss

.

Good body diode ruggedness and reduced reverse recovery charge Q rr

.

Optimized integrated R g

Benefits:

.

Low conduction losses

.

Low switching losses

.

Suitable for hard and soft switching

.

Easy controllable switching behavior

.

Improved efficiencyand consequent reduction of power consumption

.

Less design in effort

.

Easy to use

Target Applications:

.

Laptop and notebook adapter

.

Low power charger

.

Lighting

.

LCD and LED TV