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IS61LV25616-8TI

数据手册.pdf
Integrated Silicon SolutionISSI 电子元器件分类

SRAM Chip, Asynchronous, 4Mbit, 3.3V Supply, Industrial, TSOP II, 44Pin

DESCRIPTION

The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time:

  — 7, 8, 10, 12, and 15 ns

• CMOS low power operation

• Low stand-by power:

  — Less than 5 mA typ. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

IS61LV25616-8TI中文资料参数规格
封装参数

封装 TSOP-2

外形尺寸

封装 TSOP-2

其他

产品生命周期 Obsolete

符合标准

RoHS标准 Non-Compliant

IS61LV25616-8TI引脚图与封装图
暂无图片
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型号 制造商 描述 购买
IS61LV25616-8TI Integrated Silicon SolutionISSI SRAM Chip, Asynchronous, 4Mbit, 3.3V Supply, Industrial, TSOP II, 44Pin 搜索库存
替代型号IS61LV25616-8TI
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: IS61LV25616-8TI

品牌: Integrated Silicon SolutionISSI

封装:

当前型号

SRAM Chip, Asynchronous, 4Mbit, 3.3V Supply, Industrial, TSOP II, 44Pin

当前型号

型号: IS61LV25616-8T

品牌: Integrated Silicon SolutionISSI

封装:

功能相似

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616-8TI和IS61LV25616-8T的区别

型号: UPD444016LG5-A8-7JF

品牌: 日本电气

封装:

功能相似

4M-BIT CMOS FAST SRAM 256K-WORD BY 16Bit

IS61LV25616-8TI和UPD444016LG5-A8-7JF的区别

型号: UPD444016LG5-A8-7JF-A

品牌: 瑞萨电子

封装:

功能相似

256KX16 STANDARD SRAM, 8ns, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44

IS61LV25616-8TI和UPD444016LG5-A8-7JF-A的区别