IS61LV51216-10M

静态随机存取存储器 8Mb 512Kx16 10ns 3.3v

DESCRIPTION

The ISSIIS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time:

— 8, 10, and 12 ns

• CMOS low power operation

• Low stand-by power:

— Less than 5 mAtyp. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperatures available

• Lead-free available