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IS61LV25616-15T

数据手册.pdf
Integrated Silicon SolutionISSI 电子元器件分类

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION

The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time:

  — 10, 12, and 15 ns

• CMOS low power operation

• Low stand-by power:

  — Less than 5 mA typ. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

IS61LV25616-15T中文资料参数规格
封装参数

封装 TSOP-2

外形尺寸

封装 TSOP-2

其他

产品生命周期 Obsolete

IS61LV25616-15T引脚图与封装图
暂无图片
在线购买IS61LV25616-15T
型号 制造商 描述 购买
IS61LV25616-15T Integrated Silicon SolutionISSI 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 搜索库存
替代型号IS61LV25616-15T
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: IS61LV25616-15T

品牌: Integrated Silicon SolutionISSI

封装:

当前型号

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

当前型号

型号: IDT71V416VL15PHG

品牌: 艾迪悌

封装: TSOP2

功能相似

3.3V CMOS静态RAM 4 MEG ( 256K ×16位) 3.3V CMOS Static RAM 4 Meg 256K x 16-Bit

IS61LV25616-15T和IDT71V416VL15PHG的区别

型号: IDT71V416VL15PHGI

品牌: 艾迪悌

封装:

功能相似

3.3V CMOS静态RAM 4 MEG ( 256K ×16位) 3.3V CMOS Static RAM 4 Meg 256K x 16-Bit

IS61LV25616-15T和IDT71V416VL15PHGI的区别

型号: IDT71V416YL15PHG

品牌: 艾迪悌

封装:

功能相似

3.3V CMOS静态RAM 4 MEG ( 256K ×16位) 3.3V CMOS Static RAM 4 Meg 256K x 16-Bit

IS61LV25616-15T和IDT71V416YL15PHG的区别