IS42S32400D-6BLI

动态随机存取存储器 128M 4Mx32 166MHz S动态随机存取存储器, 3.3v

OVERVIEW

ISSI"s 128Mb Synchronous DRAM  achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

FEATURES

• Clock frequency: 166, 143, 125, 100 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

                       VDD    VDDQ

     IS42S32400D 3.3V  3.3V

• LVTTL interface

• Programmable burst length – 1, 2, 4, 8, full page

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh CBR

• Self Refresh with programmable refresh periods

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CASlatency 2, 3 clocks

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Available in Industrial Temperature

• Available in 86-pin TSOP-II and 90-ball FBGA

• Available in Lead-free