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IPA80R450P7XKSA1

IPA80R450P7XKSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

晶体管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V

Description:

800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. 

 

This new product family offers up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DSon products.

 

Overall, it helps customers save BOM cost and reduce assembly effort.

Summary of Features:

.
Best-in-class FOM R DSon * E oss; reduced Q g, C iss and C oss
.
Best-in-class DPAK R DSon of 280mΩ
.
Best-in-class V GSth of 3V and smallest V GSth variation of ± 0.5V
.
Integrated Zener diode ESD protection up to Class 2 HBM
.
Best-in-class quality and reliability
.
Fully optimized portfolio

Benefits:

.
0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
.
Enabling higher power density designs, BOM savings and lower assembly cost
.
Easy to drive and to design-in
.
Better production yield by reducing ESD related failures
.
Less production issues and reduced field returns
.
Easy to select right parts for fine tuning of designs

Target Applications:

.
Adapter
.
LED
.
Audio
.
Industrial SMPS
.
AUX power
IPA80R450P7XKSA1中文资料参数规格
技术参数

通道数 1

针脚数 3

漏源极电阻 450 mΩ

耗散功率 29 W

阈值电压 3 V

漏源极电压Vds 800 V

漏源击穿电压 800 V

上升时间 6 ns

输入电容Ciss 770pF @500VVds

下降时间 10 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 29W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.65 mm

宽度 4.85 mm

高度 16.15 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Rail, Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 无铅

IPA80R450P7XKSA1引脚图与封装图
暂无图片
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型号 制造商 描述 购买
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