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IPL60R125C7AUMA1

IPL60R125C7AUMA1

数据手册.pdf
Infineon(英飞凌) 分立器件

晶体管, MOSFET, N沟道, 17 A, 600 V, 0.108 ohm, 10 V, 3.5 V

Description:

The new 600V CoolMOS
.
*™** C7 series from offers a ~50% reduction in turn-off losses E oss compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies.

 

Efficiency and TCO total cost of ownership applications such as hyperdata centers and high efficiency telecom rectifiers >96% benefit from the higher efficiency offered by CoolMOS
.
*™** C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS **™** C7 Power MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

 

**Technical eLearning available**

>Watch now

Summary of Features:

.
Reduced switching loss parameters such as Q G, C oss, E oss
.
Best-in-class figure of merit Q G*R DSon
.
Increased switching frequency
.
Best R on*A in the world
.
Rugged body diode

Benefits:

.
Enables increasing switching frequency without loss in efficiency
.
Measure showing key parameter for light load and full load efficiency
.
Doubling the switching frequency will half the size of magnetic components
.
Smaller packages for same R DSon
.
Can be used in many more positions for both hard and soft switching topologies

Target Applications:

.
Server
.
Telecom
.
PC power  
.
Solar
.
Industrial
IPL60R125C7AUMA1中文资料参数规格
技术参数

针脚数 4

漏源极电阻 0.108 Ω

极性 N-CH

耗散功率 103 W

阈值电压 3.5 V

漏源极电压Vds 600 V

连续漏极电流Ids 17A

上升时间 4 ns

输入电容Ciss 1500pF @400VVds

下降时间 4 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 103W Tc

封装参数

安装方式 Surface Mount

引脚数 4

封装 PG-VSON-4

外形尺寸

封装 PG-VSON-4

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

IPL60R125C7AUMA1引脚图与封装图
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型号 制造商 描述 购买
IPL60R125C7AUMA1 Infineon 英飞凌 晶体管, MOSFET, N沟道, 17 A, 600 V, 0.108 ohm, 10 V, 3.5 V 搜索库存