IPD50R1K4CEAUMA1

晶体管, MOSFET, N沟道, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 V

Summary of Features:

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Reduced energy stored in output capacitance E oss

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High body diode ruggedness

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Reduced reverse recovery charge Q rr

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Reduced gate charge Q g

Benefits:

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Easy control of switching behavior

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Better light load efficiency compared to previous CoolMOS™ generations

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Cost attractive alternative compared to standard MOSFETs

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Outstanding quality and reliability of CoolMOS™ technology

Target Applications:

 

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Consumer

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Lighting

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PC silverbox