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IPB65R660CFDA

IPB65R660CFDA

数据手册.pdf
Infineon(英飞凌) 电子元器件分类

N沟道 650V 6A

Summary of Features:

.
First 650V automotive qualified technology with integrated fast body diode on the market
.
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
.
Low gate charge value Q g
.
Low Q rr at repetitive commutation on body diode & lowQ oss
.
Reduced turn on and turn of delay times
.
Compliant to AEC Q101 standard

Benefits:

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Increased safety margin due to higher breakdown voltage
.
Reduced EMI appearance and easy to design in
.
Better light load efficiency
.
Lower switching losses
.
Higher switching frequency and/or higher duty cycle possible
.
High quality and reliability
IPB65R660CFDA中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 650 V

连续漏极电流Ids 6A

上升时间 8 ns

下降时间 10 ns

封装参数

封装 TO-263

外形尺寸

封装 TO-263

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Unidirectional and bidirectional DC-DC converter, Battery charger, HID lighting

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IPB65R660CFDA引脚图与封装图
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