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IPW60R060C7XKSA1

IPW60R060C7XKSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

晶体管, MOSFET, N沟道, 35 A, 600 V, 0.052 ohm, 10 V, 3.5 V

Description:

The new 600V CoolMOS
.
*™** C7 series from offers a ~50% reduction in turn-off losses E oss compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies.

 

Efficiency and TCO total cost of ownership applications such as hyperdata centers and high efficiency telecom rectifiers >96% benefit from the higher efficiency offered by CoolMOS
.
*™** C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS **™** C7 Power MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

 

**Technical eLearning available**

>Watch now

Summary of Features:

.
Reduced switching loss parameters such as Q G, C oss, E oss
.
Best-in-class figure of merit Q G*R DSon
.
Increased switching frequency
.
Best R on*A in the world
.
Rugged body diode

Benefits:

.
Enables increasing switching frequency without loss in efficiency
.
Measure showing key parameter for light load and full load efficiency
.
Doubling the switching frequency will half the size of magnetic components
.
Smaller packages for same R DSon
.
Can be used in many more positions for both hard and soft switching topologies

Target Applications:

.
Server
.
Telecom
.
PC power  
.
Solar
.
Industrial
IPW60R060C7XKSA1中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.052 Ω

极性 N-CH

耗散功率 162 W

阈值电压 3.5 V

漏源极电压Vds 600 V

连续漏极电流Ids 35A

上升时间 11 ns

输入电容Ciss 2850pF @400VVds

下降时间 4 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 162W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

长度 16.13 mm

宽度 5.21 mm

高度 21.1 mm

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IPW60R060C7XKSA1引脚图与封装图
暂无图片
在线购买IPW60R060C7XKSA1
型号 制造商 描述 购买
IPW60R060C7XKSA1 Infineon 英飞凌 晶体管, MOSFET, N沟道, 35 A, 600 V, 0.052 ohm, 10 V, 3.5 V 搜索库存
替代型号IPW60R060C7XKSA1
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: IPW60R060C7XKSA1

品牌: Infineon 英飞凌

封装: PG-TO247-3 N-CH 600V 35A

当前型号

晶体管, MOSFET, N沟道, 35 A, 600 V, 0.052 ohm, 10 V, 3.5 V

当前型号

型号: STW43NM60ND

品牌: 意法半导体

封装: TO-247 N-Channel 600V 35A

功能相似

STMICROELECTRONICS  STW43NM60ND  功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.075 ohm, 10 V, 4 V

IPW60R060C7XKSA1和STW43NM60ND的区别