IGP15N60T
数据手册.pdfInfineon(英飞凌)
分立器件
低损耗IGBT的TRENCHSTOP和场终止技术 Low Loss IGBT in TrenchStop and Fieldstop technology
Summary of Features:
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- Lowest V cesat drop for lower conduction losses
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- Low switching losses
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- Easy parallel switching capability due to positive temperature coefficient in V cesat
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- Very soft, fast recovery anti-parallel Emitter Controlled Diode
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- High ruggedness, temperature stable behavior
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- Low EMI emissions
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- Low gate charge
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- Very tight parameter distribution
Benefits:
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- Highest efficiency – low conduction and switching losses
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- Comprehensive portfolio in 600V and 1200V for flexibility of design
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- High device reliability