IPD60R1K0CE

650V,6.8A,N沟道功率MOSFET

Summary of Features:

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Narrow margins between typical and max R DSon

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Reduced energy stored in output capacitance E oss

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Good body diode ruggedness and reduced reverse recovery charge Q rr

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Optimized integrated R g

Benefits:

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Low conduction losses

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Low switching losses

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Suitable for hard and soft switching

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Easy controllable switching behavior

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Improved efficiencyand consequent reduction of power consumption

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Less design in effort

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Easy to use

Target Applications:

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Laptop and notebook adapter

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Low power charger

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Lighting

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LCD and LED TV