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IR21365S
Infineon 英飞凌 电子元器件分类

MOSFET DRVR 600V 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W

Summary of Features:

.
Floating channel designed for bootstrap operation
.
Fully operational to +600 V
.
Tolerant to negative transient voltage, dV/dt immune
.
Gate drive supply range from 12 V to 20 V
.
Undervoltage lockout for all channels
.
Over-current shutdown turns off all six drivers
.
Independent 3 half-bridge drivers
.
Matched propagation delay for all channels
.
Cross-conduction prevention logic
.
Low side output out of phase with inputs. High side outputs out of phase
.
3.3 V logic compatible
.
Lower di/dt gate drive for better noise immunity
.
Externally programmable delay for automatic fault clear
.
Variations include IR21363
IR21365S中文资料参数规格
封装参数

封装 SOIC

外形尺寸

封装 SOIC

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IR21365S引脚图与封装图
IR21365S电路图

IR21365S电路图

在线购买IR21365S
型号 制造商 描述 购买
IR21365S Infineon 英飞凌 MOSFET DRVR 600V 6Out Hi/Lo Side 3-Phase Brdg Inv 28Pin SOIC W 搜索库存