IKW50N65ES5XKSA1

单晶体管, IGBT, 80 A, 1.35 V, 274 W, 650 V, TO-247, 3 引脚

Summary of Features:

.

Very low V CEsat of 1.35V at 25°C, 20% lower than TRENCHSTOP™ 5 H5

.

I Cn=four times nominal current 100°C T c

.

Soft current fall characteristics with no tail current

.

Symmetrical, low voltage overshoot

.

Gate voltage under control no oscillation. No risk of unwanted turn-on of device and no need for gate clamping

.

Maximum junction temperature T vj=175°C

.

Qualified according to JEDEC standards

Benefits:

.

V CEpeak clamping circuits not required

.

Suitable for use with single turn-on / turn-off gate resistor

.

No need for gate clamping components

.

Gate drivers with Miller clamping not required

.

Reduction in the EMI filtering needed

.

Excellent for paralleling