IKW40T120FKSA1
数据手册.pdfINFINEON IKW40T120FKSA1 单晶体管, IGBT, 通用, 75 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚
TrenchStop IGBT ，电压 1100 至 1600V
一系列 Infineon 的 IGBT 晶体管，带电压额定值为 1100 至 1600V 的集电极-发射极，采用 TrenchStop™ 技术。该系列包括带集成高速、快速恢复防并联二极管的设备。
集电极-发射极电压范围 1100 至 1600V
极低 VCEsat
低关闭损耗
短尾线电流
低 EMI
最高接点温度 175°C
得捷:
IGBT 1200V 75A 270W TO247-3
欧时:
Infineon IKW40T120FKSA1 N沟道 IGBT, Vce=1200 V, 75 A, 3引脚 TO-247封装
贸泽:
IGBT 晶体管 LOW LOSS DuoPack 1200V 40A
艾睿:
The IKW40T120FKSA1 IGBT transistor from Infineon Technologies is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a single configuration.
Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 75A 3-Pin3+Tab TO-247
Verical:
Trans IGBT Chip N-CH 1200V 75A 270000mW Automotive 3-Pin3+Tab TO-247 Tube
Newark:
# INFINEON IKW40T120FKSA1 IGBT Single Transistor, General Purpose, 75 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 Pins
Win Source:
IGBT 1200V 75A 270W TO247-3 / IGBT NPT, Trench Field Stop 1200 V 75 A 270 W Through Hole PG-TO247-3-1