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IPB80N04S2-H4

IPB80N04S2-H4

数据手册.pdf
Infineon(英飞凌) 分立器件

OptiMOS㈢功率三极管 OptiMOS㈢ Power-Transistor

Summary of Features:

.
N-channel - Enhancement mode
.
Automotive AEC Q101 qualified
.
MSL1 up to 260°C peak reflow
.
175°C operating temperature
.
Ultra low Rdson
.
100% Avalanche tested
.
Green product RoHS compliant

Benefits:

.
world"s lowest RDS at 40V on
.
highest current capability
.
lowest switching and conduction power losses for highest thermal efficiency
.
robust packages with superior quality and reliability
.
Optimized total gate charge enables smaller driver output stages
IPB80N04S2-H4中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 40 V

连续漏极电流Ids 80A

上升时间 63 ns

输入电容Ciss 4400pF @25VVds

额定功率Max 300 W

下降时间 22 ns

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 175℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec, Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

IPB80N04S2-H4引脚图与封装图
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