IPI029N06NAKSA1
数据手册.pdf晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 2.8 V, 10 V
通孔 N 通道 60 V 24A（Ta），100A（Tc） 3W（Ta），136W（Tc） PG-TO262-3
得捷:
MOSFET N-CH 60V 24A/100A TO262-3
欧时:
INFINEON MOSFET IPI029N06NAKSA1
立创商城:
IPI029N06NAKSA1
贸泽:
MOSFET N-Ch 60V 100A I2PAK-3
e络盟:
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0027 ohm, 2.8 V, 10 V
艾睿:
This IPI029N06NAKSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 3000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
TME:
Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO262-3
Verical:
Trans MOSFET N-CH 60V 100A 3-Pin3+Tab TO-262 Tube