IPD180N10N3GBTMA1
数据手册.pdfInfineon(英飞凌)
分立器件
INFINEON IPD180N10N3GBTMA1 晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V 新
IPD180N10N3 G, SP000482438
得捷:
MOSFET N-CH 100V 43A TO252-3
贸泽:
MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 43 A, 0.0147 ohm, TO-252 DPAK, 表面安装
艾睿:
Trans MOSFET N-CH 100V 43A 3-Pin2+Tab DPAK T/R
富昌:
IPD180N10N3 系列 100 V 18 mOhm N沟道 OptiMOSTM3 功率-晶体管 -PG-TO-252-3
Chip1Stop:
Trans MOSFET N-CH 100V 43A 3-Pin2+Tab TO-252
TME:
Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO252-3
Verical:
Trans MOSFET N-CH 100V 43A 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON IPD180N10N3GBTMA1 MOSFET, N-CH, 100V, 43A, TO-252-3 New