IXGT30N120B3D1

IGBT 分立，IXYS### IGBT 分立元件和模块，IXYS绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，IXYS

欧时:
IXYS IXGT30N120B3D1 IGBT, 50 A, Vce=1200 V, 3引脚 TO-268封装

得捷:
IGBT 1200V 300W TO268

e络盟:
单晶体管, IGBT, 50 A, 2.96 V, 300 W, 1.2 kV, TO-268 D3PAK, 3 引脚

艾睿:
This IXGT30N120B3D1 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Verical:
Trans IGBT Chip 1200V 50A 3-Pin2+Tab TO-268

Newark:
# IXYS SEMICONDUCTOR  IXGT30N120B3D1  IGBT, SINGLE, N-CH, 1.2KV, 50A, TO-268 New

DeviceMart:
IGBT PT 1200V 30A W/DIODE TO268

Win Source:
IGBT 1200V 300W TO268 / IGBT PT 1200 V 300 W Surface Mount TO-268AA