锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

IXBX25N250

IXBX25N250

数据手册.pdf
IXYS Semiconductor 分立器件

Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin3+Tab PLUS 247

This powerful and secure IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


得捷:
IGBT 2500V 55A 300W PLUS247


艾睿:
This powerful and secure IXBX25N250 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


Chip1Stop:
Trans IGBT Chip N-CH 2.5KV 55A 3-Pin3+Tab PLUS 247


Verical:
Trans IGBT Chip N-CH 2500V 55A 300000mW 3-Pin3+Tab PLUS 247


DeviceMart:
IGBT 2500V 55A 300W PLUS247


IXBX25N250中文资料参数规格
技术参数

耗散功率 300000 mW

击穿电压集电极-发射极 2500 V

反向恢复时间 1.6 µs

额定功率Max 300 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

IXBX25N250引脚图与封装图
暂无图片
在线购买IXBX25N250
型号 制造商 描述 购买
IXBX25N250 IXYS Semiconductor Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin3+Tab PLUS 247 搜索库存