IXGH24N120C3

Trans IGBT Chip N-CH 1200V 48A 250000mW 3Pin3+Tab TO-247

This fast-switching IGBT transistor from Ixys Corporation will be perfect in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

得捷:
IGBT 1200V 48A 250W TO247

贸泽:
IGBT Transistors 48 Amps 1200V

艾睿:
This fast-switching IXGH24N120C3 IGBT transistor from Ixys Corporation will be perfect in your circuit. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 48A 3-Pin3+Tab TO-247

Verical:
Trans IGBT Chip N-CH 1.2KV 48A 3-Pin3+Tab TO-247

Win Source:
IGBT 1200V 48A 250W TO247