IXGT16N170AH1

IGBT 1700V 16A 190W TO268

The IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

得捷:
IGBT 1700V 16A 190W TO268

艾睿:
Trans IGBT Chip N-CH 1.7KV 16A