IXGX32N170AH1

Trans IGBT Chip N-CH 1700V 32A 350000mW 3Pin3+Tab PLUS 247

The IGBT transistor from Ixys Corporation is the best electronic switch for fast switching. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 350000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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IGBT 1700V 32A 350W PLUS247

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Trans IGBT Chip N-CH 1.7KV 32A 3-Pin3+Tab PLUS 247