IXGX32N170H1

Trans IGBT Chip N-CH 1700V 75A 350000mW 3Pin3+Tab PLUS 247

This IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 350000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

得捷:
IGBT 1700V 75A 350W PLUS247

艾睿:
This IXGX32N170H1 IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 350000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

富昌:
IXGX 系列 1700 Vce 75 A 45 ns ton 高压 IGBT 带二极管 - PLUS247