IXGT10N170

IGBT 晶体管 20 Amps 1700 V 4 V Rds

The IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 110000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

得捷:
IGBT 1700V 20A 110W TO268

贸泽:
IGBT 晶体管 20 Amps 1700 V 4 V Rds

艾睿:
Trans IGBT Chip N-CH 1700V 20A 110000mW 3-Pin2+Tab TO-268