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IXBX64N250

IXBX64N250

数据手册.pdf
IXYS Semiconductor 分立器件

Trans IGBT Chip N-CH 2500V 156A 735000mW 3Pin3+Tab TO-264

You can use this IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


得捷:
IGBT 2500V


艾睿:
You can use this IXBX64N250 IGBT transistor from Ixys Corporation as an electronic switch. Its maximum power dissipation is 735000 mW. It has a maximum collector emitter voltage of 2500 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


IXBX64N250中文资料参数规格
技术参数

耗散功率 735000 mW

击穿电压集电极-发射极 2500 V

反向恢复时间 160 ns

额定功率Max 735 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 735000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

IXBX64N250引脚图与封装图
暂无图片
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