IXXH50N60B3D1

Trans IGBT Chip N-CH 600V 120A 600000mW 3Pin3+Tab TO-247AD

IGBT PT 通孔 TO-247（IXXH）

得捷:
IGBT 600V 120A 600W TO247

贸泽:
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

艾睿:
This fast-switching IXXH50N60B3D1 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology.