IXKC15N60C5
数据手册.pdf
IXYS Semiconductor
分立器件
MOSFET N-CH 600V 15A ISOPLUS220
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
Features
• Silicon chip on Direct-Copper-Bond substrate
\- high power dissipation
\- isolated mounting surface
\- 2500 V electrical isolation
- low drain to tab capacitance < 30 pF
• Fast CoolMOS™ power MOSFET 4th generation
- high blocking capability
\- lowest resistance
- avalanche rated for unclamped inductive switching UIS
- low thermal resistance due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power suppliesSMPS
• Uninterruptible power supplies UPS
• Power factor correction PFC
• Welding
• Inductive heating
• PDP and LCD adapter
