IXFN420N10T

N沟道 100V 420A

底座安装 N 通道 100 V 420A（Tc） 1070W（Tc） SOT-227B

立创商城:
N沟道 100V 420A

得捷:
MOSFET N-CH 100V 420A SOT227B

欧时:
MOSFET 420A 100V SOT227

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFN420N10T power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 1070000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.

TME:
Module; single transistor; Uds:100V; Id:420A; SOT227B; 1.07kW

Verical:
Trans MOSFET N-CH 100V 420A 4-Pin SOT-227B