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IXFH20N100P

IXFH20N100P

数据手册.pdf
IXYS Semiconductor 分立器件

N沟道 1kV 20A

In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.


得捷:
MOSFET N-CH 1000V 20A TO247AD


立创商城:
N沟道 1kV 20A


艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXFH20N100P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 1KV 20A 3-Pin3+Tab TO-247


Win Source:
MOSFET N-CH 1000V 20A TO-247


IXFH20N100P中文资料参数规格
技术参数

通道数 1

极性 N-CH

耗散功率 660 W

阈值电压 6.5 V

漏源极电压Vds 1000 V

连续漏极电流Ids 20A

上升时间 37 ns

输入电容Ciss 7300pF @25VVds

下降时间 45 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 660W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

宽度 5.3 mm

封装 TO-247-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IXFH20N100P引脚图与封装图
暂无图片
在线购买IXFH20N100P
型号 制造商 描述 购买
IXFH20N100P IXYS Semiconductor N沟道 1kV 20A 搜索库存
替代型号IXFH20N100P
图片 型号/品牌/封装 代替类型 描述 替代型号对比

型号: IXFH20N100P

品牌: IXYS Semiconductor

封装: TO-247-3 N-CH 1000V 20A

当前型号

N沟道 1kV 20A

当前型号

型号: IXFT20N100P

品牌: IXYS Semiconductor

封装: TO-268-2 N-CH 1000V 20A

完全替代

TO-268 N-CH 1000V 20A

IXFH20N100P和IXFT20N100P的区别