锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

IXTA6N50D2

IXTA6N50D2

数据手册.pdf
IXYS Semiconductor 分立器件

Trans MOSFET N-CH 500V 3Pin2+Tab TO-263AA

This power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


得捷:
MOSFET N-CH 500V 6A TO263


贸泽:
MOSFET N-CH MOSFETS D2 500V 6A


艾睿:
This IXTA6N50D2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET N-CH 500V 3-Pin2+Tab D2PAK


DeviceMart:
MOSFET N-CH 500V 6A D2PAK


IXTA6N50D2中文资料参数规格
技术参数

通道数 1

漏源极电阻 550 mΩ

耗散功率 300 W

漏源极电压Vds 500 V

漏源击穿电压 500 V

上升时间 72 ns

输入电容Ciss 2800pF @25VVds

额定功率Max 300 W

下降时间 43 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

长度 9.65 mm

宽度 10.41 mm

高度 4.83 mm

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

IXTA6N50D2引脚图与封装图
暂无图片
在线购买IXTA6N50D2
型号 制造商 描述 购买
IXTA6N50D2 IXYS Semiconductor Trans MOSFET N-CH 500V 3Pin2+Tab TO-263AA 搜索库存