IPL60R180P6AUMA1
数据手册.pdf晶体管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V
表面贴装型 N 通道 600 V 22.4A（Tc） 176W（Tc） PG-VSON-4
欧时:
Infineon MOSFET IPL60R180P6AUMA1
得捷:
MOSFET N-CH 600V 22.4A 4VSON
立创商城:
N沟道 600V 22.4A
贸泽:
MOSFET HIGH POWER PRICE/PERFORM
e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 22.4 A, 0.162 ohm, VSON, 表面安装
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPL60R180P6AUMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 176000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This device is made with coolmos p6 technology.
安富利:
Trans MOSFET N-CH 650V 22.4A 5-Pin VSON T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4