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IGW40N60H3FKSA1

IGW40N60H3FKSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

Trans IGBT Chip N-CH 600V 80A 306000mW 3Pin3+Tab TO-247 Tube

Summary of Features:

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Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
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Low switching losses for high efficiency
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Excellent V cesat behavior thanks to the famous TRENCHSTOP™ technology
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Fast switching behavior with low EMI emissions
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Optimized diode for target applications, meaning further improvement in switching losses
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Low gate resistor selection possible down to 5Ω whilst maintaining excellent switching behaviour
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Short circuit capability
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Offering T jmax of 175°C
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Packaged with and without freewheeling diode for increased design freedom

Benefits:

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Excellent cost/performance
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Low switching and conduction losses
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Very good EMI behavior
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A small gate resistor for reduced delay time and voltage overshoot
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Smaller die sizes -> smaller packages
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Best-in-class IGBT efficiency and EMI behavior
IGW40N60H3FKSA1中文资料参数规格
技术参数

耗散功率 306000 mW

击穿电压集电极-发射极 600 V

额定功率Max 306 W

工作温度Max 175 ℃

工作温度Min -40 ℃

耗散功率Max 306000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-247-3

外形尺寸

封装 TO-247-3

物理参数

工作温度 -40℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

制造应用 All hard switching applications

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

IGW40N60H3FKSA1引脚图与封装图
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