IPP126N10N3GXKSA1
数据手册.pdfInfineon OptiMOS 3 系列 Si N沟道 MOSFET IPP126N10N3GXKSA1, 58 A, Vds=100 V, 3引脚 TO-220封装
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 100V 58A TO220-3
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP126N10N3GXKSA1, 58 A, Vds=100 V, 3引脚 TO-220封装
立创商城:
N沟道 100V 58A
e络盟:
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 2.7 V
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPP126N10N3GXKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 94000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
Chip1Stop:
Trans MOSFET N-CH 100V 58A 3-Pin3+Tab TO-220
TME:
Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Verical:
Trans MOSFET N-CH 100V 58A Automotive 3-Pin3+Tab TO-220 Tube
Newark:
# INFINEON IPP126N10N3GXKSA1 MOSFET Transistor, N Channel, 58 A, 100 V, 0.011 ohm, 10 V, 2.7 V
Win Source:
MOSFET N-CH 100V 58A TO220-3