IPP80N06S209AKSA2

晶体管, MOSFET, N沟道, 80 A, 55 V, 0.0076 ohm, 10 V, 3 V

Summary of Features:

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N-channel - Enhancement mode

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Automotive AEC Q101 qualified

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MSL1 up to 260°C peak reflow

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175°C operating temperature

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Green package lead free

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Ultra low Rdson

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100% Avalanche tested

Benefits:

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world"s lowest RDS at 55V on  in planar technology

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highest current capability

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lowest switching and conduction power losses for highest thermal efficiency

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robust packages with superior quality and reliability

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Optimized total gate charge enables smaller driver output stages