IPW60R125P6XKSA1

晶体管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V

Summary of Features:

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Reduced gate charge Q g

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Higher V th

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Good body diode ruggedness

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Optimized integrated R g

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Improved dv/dt from 50V/ns

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CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits:

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Improved effciency especially in light load condition

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Better efficiency in soft switching applications due to earlier turn-off

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Suitable for hard- & soft-switching topologies

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Optimized balance of efficiency and ease of use and good controllability of switching behavior

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High robustness and better efficiency

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Outstanding quality & reliability