IPD60R1K0CEATMA1

DPAK N-CH 600V 4.3A

N-Channel 600V 4.3A Tc 37W Tc Surface Mount TO-252-3

得捷:
MOSFET N-CH 600V 4.3A TO252-3

贸泽:
MOSFET N-Ch 600V 4.3A DPAK-2

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; IPD60R1K0CEATMA1 power MOSFET is for you. Its maximum power dissipation is 37000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with coolmos ce technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-252 T/R

富昌:
N-沟道 600 V 4.3 A 1000 mΩ 13 nC CoolMOS CE 功率 晶体管 - DPAK

TME:
Transistor: N-MOSFET; unipolar; 600V; 4.3A; 37W; PG-TO252-3

Verical:
Trans MOSFET N-CH 600V 4.3A 3-Pin2+Tab DPAK T/R