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IPP100N04S303AKSA1

IPP100N04S303AKSA1

数据手册.pdf
Infineon(英飞凌) 分立器件

N沟道 40V 100A

通孔 N 通道 40 V 100A(Tc) 214W(Tc) PG-TO220-3-1


立创商城:
N沟道 40V 100A


得捷:
MOSFET N-CH 40V 100A TO220-3


艾睿:
Use Infineon Technologies&s; IPP100N04S303AKSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 214000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.


Verical:
Trans MOSFET N-CH 40V 100A Automotive 3-Pin3+Tab TO-220AB Tube


IPP100N04S303AKSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 214 W

漏源极电压Vds 40 V

连续漏极电流Ids 100A

上升时间 16 ns

输入电容Ciss 9600pF @25VVds

下降时间 17 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 214W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

制造应用 OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec, Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

符合标准

RoHS标准

含铅标准 Lead Free

IPP100N04S303AKSA1引脚图与封装图
暂无图片
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